1 edition 1.4 august 2004 FLM1011-3F x, ku-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 25.0 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 13.0 and -1.4 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 1400 2100 -0.5 -1.5 -3.0 34.0 35.0 - 6.5 7.5 - v ds = 5v, i ds = 70ma v ds = 5v, i ds = 900ma v ds = 5v, v gs = 0v i gs = -70 a v ds = 10v, i ds = 0.6 i dss (typ.), f = 10.7 ~ 11.7 ghz, z s = z l = 50 ? ma v - 1300 - ms -5.0 - - v db dbm g m v p v gso p 1db g 1db drain current - 900 1100 ma i dsr power-added efficiency -29- % add gain flatness -- 0.6 db ? g thermal resistance channel to case - 5.0 6.0 c/w case style: ia r th 3rd order intermodulation distortion f = 11.7ghz, ? f = 10mhz 2-tone test pout = 24.0dbm s.c.l. -44 -46 - dbc im 3 test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) g.c.p.: gain compression point, s.c.l.: single carrier level 10v x i dsr x r th channel temperature rise - - 66 c ? t ch description the FLM1011-3F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 35.0dbm (typ.) ?high gain: g 1db = 7.5db (typ.) ?high pae: add = 29% (typ.) ?low im 3 = -46dbc@po = 24.0dbm ?broad band: 10.7 ~ 11.7ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed
2 FLM1011-3F x, ku-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( c) 24 30 18 12 6 total power dissipation (w) output power & im 3 vs. input power 16 14 12 18 20 22 input power (s.c.l.) (dbm) s.c.l.: single carrier level 23 25 27 29 31 21 -55 -45 -25 -15 -35 output power (s.c.l.) (dbm) im 3 im 3 (dbc) v ds =10v f 1 = 11.7 ghz f 2 = 11.71 ghz 2-tone test 19 p out output power vs. frequency pin=28dbm 26dbm 24dbm 22dbm 10.7 10.95 11.2 11.45 11.7 frequency (ghz) 30 31 32 33 34 35 36 37 output power (dbm) v ds =10v p 1db output power vs. input power v ds =10v f = 11.2 ghz 19 21 23 25 27 29 input power (dbm) 28 30 32 34 36 26 20 10 30 40 output power (dbm) add p out add (%)
3 FLM1011-3F x, ku-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 0.2 0.1 250 50 ? 10 20 1 2 34 11.7 11.7 11.9 11.9 11.3 11.3 10.5 ghz 10.5 ghz 10.7 10.7 10.9 10.9 11.1 11.1 11.5 11.5 11.7 11.7 11.9 11.9 11.3 11.3 10.5 ghz 10.5 ghz 10.7 10.7 10.9 10.9 11.1 11.1 11.5 11.5 s-parameters v ds = 10v, i ds = 900ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 10500 .606 127.5 2.381 -45.7 .045 -34.6 .500 -144.6 10600 .586 118.0 2.475 -54.3 .047 -47.4 .491 -154.2 10700 .556 107.5 2.574 -63.8 .050 -64.6 .474 -165.0 10800 .532 96.4 2.663 -73.4 .053 -76.4 .466 -175.9 10900 .493 84.3 2.767 -83.3 .058 -98.2 .452 172.4 11000 .457 71.3 2.859 -94.1 .064 -110.4 .442 159.8 11100 .413 55.9 2.929 -105.0 .070 -126.2 .430 146.9 11200 .375 38.7 2.984 -116.4 .075 -137.1 .424 133.6 11300 .333 19.7 2.995 -127.8 .081 -151.9 .411 120.4 11400 .301 -3.4 2.992 -139.6 .086 -164.5 .394 106.6 11500 .291 -28.4 2.935 -151.4 .089 -177.0 .375 92.5 11600 .297 -51.8 2.861 -162.7 .093 171.1 .361 79.1 11700 .320 -74.6 2.776 -173.8 .096 157.2 .341 65.6 11800 .354 -93.8 2.681 175.3 .097 147.3 .320 50.6 11900 .399 -109.4 2.565 164.8 .099 134.2 .305 37.7
4 FLM1011-3F x, ku-band internally matched fet 2-r 1.25 0.15 (0.049) 0.5 (0.020) 8.1 (0.319) 13.0 0.15 (0.512) 16.5 0.15 (0.650) 3.2 max. (0.126) 1.8 0.15 (0.071) 0.1 (0.004) 9.7 0.15 (0.382) 1.5 min. (0.059) 1.5 min. (0.059) 1.15 (0.045) 0.2 max. (0.008) case style "ia" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 2 3 4 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
|
